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300ma high speed, extremely low noise cmos ldo regulator AP2126 1 jun. 2008 rev. 1.1 bcd semiconductor manufacturing limited data sheet general description the AP2126 is a 300ma, positive voltage regulator ics fabricated by cmos process. each of AP2126 is equipped with a voltage reference, an error amplifier, a resistor network for setting output voltage, a chip enable circuit, a current limit circuit and ostd (over temperat ure shut down) ci rcuit to prevent the ic from over current and over temperature. the AP2126 has features of high ripple rejection, low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make it ideal for use in various battery-powered apparatus. AP2126 has 3.3v fixed voltage version. it is available in sot-23-5 package. features low dropout voltage: 170mv@300ma high output voltage accuracy: 2% high ripple rejection: 65db@ f=1khz, 45db@ f=10khz low standby current: 0.1 a low quiescent current: 60 a typical low output noise: 60 vrms short current limit: 50ma over temperature protection compatible with low esr ceramic capacitor: 1 f for c in and c out excellent line/load regulation soft start time : 50 s auto discharge resistance: r ds(on) =60 ? applications datacom notebook computers mother board figure 1. package type of AP2126 sot-23-5
300ma high speed, extremely low noise cmos ldo regulator AP2126 2 jun. 2008 rev. 1.1 bcd semiconductor manufacturing limited data sheet figure 2. pin configuration of AP2126 (top view) pin configuration 4 k package (sot-23-5) 2 3 1 5 v in gnd v out nc shutdown functional block diagram uvlo & shutdown logic thermal shutdown foldback current limit v ref gnd shutdown nc vout vin 3m ? figure 3. functional block diagram of AP2126
300ma high speed, extremely low noise cmos ldo regulator AP2126 3 jun. 2008 rev. 1. 1 bcd semiconductor manufacturing limited data sheet bcd semiconductor's products, as designated with "g1" suffix in the pa rt number, are rohs compliant and green. circuit type package k: sot-23-5 AP2126 - tr: tape and reel ordering information g1: green 3.3: fixed output 3.3v product package temperature range part number marking id packing type green green AP2126 sot-23-5 -40 to 85 o c AP2126k-3.3trg1 fef tape & reel
300ma high speed, extremely low noise cmos ldo regulator AP2126 4 jun. 2008 rev. 1.1 bcd semiconductor manufacturing limited data sheet parameter symbol value unit input voltage v in 6.5 v shutdown input voltage v ce -0.3 to v in +0.3 v output current i out 450 ma junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead 260 o c thermal resistance r ja 250 o c/w esd (human body model) esd 6000 v esd (machine model) esd 300 v absolute maximum ratings (note 1) parameter symbol min max unit input voltage v in -6 v operating junction temperature range t j -40 85 o c recommended operating conditions note 1: stresses greater than those li sted under "absolute maximu m ratings" may cause permanen t damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolut e maximum ratings" for extended periods may affect device reliability.
300ma high speed, extremely low noise cmos ldo regulator AP2126 5 jun. 2008 rev. 1. 1 bcd semiconductor manufacturing limited data sheet parameter symbol conditions min typ max unit output voltage v out v in =v out +1v 1ma i out 300ma 98%* v out 102%* v out v input voltage v in 6v maximum output current i out(max) 450 ma load regulation ? v out /( ? i out* v out ) v in -v out =1v, 1ma i out 300ma 0.6 %/a line regulation ? v out /( ? v in *v out ) v out +0.5v v in 6v i out =30ma 0.06 %/v dropout voltage v drop v out =3.3v, i out =300ma 170 300 mv quiescent current i q v in =v out +1v, i out = 0ma 60 90 a standby current i std v in =v out +1v, v shutdown in off mode 0.1 1.0 a power supply rejection ratio psrr ripple 1vp-p v in =v out +1v f=100hz 65 db f=1khz 65 db f=10khz 45 db output voltage temperature coefficient ( ? v out /v out ) / ? t i out =30ma, -40 o c t j 85 o c 100 ppm/ o c output current limit i limit v in -v out =1v, v out =0.98*v out 400 ma short current limit i short v out =0v 50 ma soft start time t up 50 s rms output noise v noise t a =25 o c, 10hz f 100khz 60 vrms shutdown "high" voltage shutdown input voltage "high" 1.5 6 v shutdown "low" voltage shutdown input voltage "low" 0 0.4 v v out discharge mosfet r ds(on) shutdown input voltage "low" 60 ? shutdown pull down resis- tance 3 m ? thermal shutdown 165 o c thermal shutdown hysteresis 30 o c electrical characteristics (continued) (AP2126-3.3v, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.)
300ma high speed, extremely low noise cmos ldo regulator AP2126 6 jun. 2008 rev. 1.1 bcd semiconductor manufacturing limited data sheet typical performance characteristics figure 5. dropout voltage vs. output current, v out =3.3v figure 6. quiescent current vs. output current 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 180 200 220 240 dropout voltage (mv) output current (ma) t c =-40 o c t c =25 o c t c =125 o c 0 50 100 150 200 250 300 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 quiescent current ( a) output current (ma) t c =-40 o c t c =25 o c t c =85 o c v in =4.3v, v out =3.3v -40 -20 0 20 40 60 80 100 120 50 52 54 56 58 60 62 64 66 68 70 quiescent current ( a) case temperature ( o c) i out =0 v in =4.3v, v out =3.3v figure 7. quiescent current vs. case temperature 0.00.10.20.30.40.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 output voltage (v) output current (a) t c =-40 o c t c =25 o c t c =85 o c v in =4.3v figure 4. output voltage vs. output current
300ma high speed, extremely low noise cmos ldo regulator AP2126 7 jun. 2008 rev. 1. 1 bcd semiconductor manufacturing limited data sheet typical performance ch aracteristics (continued) figure 8. quiescent current vs. input voltage f igure 9. output voltage vs. case temperature figure 10. short current vs. case temperatur e figure 11. output voltage vs. input voltage 0123456 0 10 20 30 40 50 60 70 80 quiescent current ( a) input voltage (v) t c =-40 o c t c =25 o c t c =85 o c i out =0 -40-20 0 20406080100120 3.284 3.285 3.286 3.287 3.288 3.289 3.290 3.291 3.292 3.293 3.294 3.295 output voltage (v) case temperature ( o c) i out =10ma c in =c out =1 f, v in =4.3v -40 -20 0 20 40 60 80 100 120 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 short current (ma) case temperature ( o c) c in =c out =1 f, v in =4.3v 0123456 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 output voltage (v) input voltage (v) i out =0 i out =300ma t c =25 o c
300ma high speed, extremely low noise cmos ldo regulator AP2126 8 jun. 2008 rev. 1.1 bcd semiconductor manufacturing limited data sheet typical performance ch aracteristics (continued) figure 13. load transient (conditions: c in =c out =1 f, v in =4.4v, v out =3.3v) i out v out figure 12. power dissipation vs. case temperature -40 -20 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 power dissipation (w) case temperature( o c) v out =3.3v no heatsink figure 14. line transient (conditions: i out =30ma, c in =c out =1 f, v in =4 to 5v, v out =3.3v) v in v out figure 15. soft start time (conditions: i out =0ma, c in =c out =1 f, v shutdown =0 to 2v, v out =3.3v) v out v shutdown
300ma high speed, extremely low noise cmos ldo regulator AP2126 9 jun. 2008 rev. 1. 1 bcd semiconductor manufacturing limited data sheet typical performance ch aracteristics (continued) figure 16. psrr vs. frequency 100 1000 10000 100000 0 10 20 30 40 50 60 70 80 90 100 psrr (db) frequency (hz) i out =10ma i out =300ma ripple=1vpp, c out =1 f, v out =3.3v
300ma high speed, extremely low noise cmos ldo regulator AP2126 10 jun. 2008 rev. 1.1 bcd semiconductor manufacturing limited data sheet typical application v in v in v out v out shutdown gnd c out 1 f c in 1 f AP2126 v out =3.3v figure 17. typical application of AP2126
300ma high speed, extremely low noise cmos ldo regulator AP2126 11 jun. 2008 rev. 1. 1 bcd semiconductor manufacturing limited data sheet mechanical dimensions sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 1 . 0 5 0 ( 0 . 0 4 1 ) 0.300(0.012) 0.950(0.037) 1 . 0 5 0 ( 0 . 0 4 1 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 1 . 2 5 0 ( 0 . 0 4 9 ) 0 . 1 0 0 ( 0 . 0 0 4 ) 1 . 1 5 0 ( 0 . 0 4 5 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen, 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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